general purpose application. features including two devices in tes6. (thin extreme super mini type with 6 pin.) simplify circuit design. reduce a quantity of parts and manufacturing process. dim millimeters a a1 b1 c tes6 1.6 0.05 1.0 0.05 1.6 0.05 1.2 0.05 0.50 0.2 0.05 0.5 0.05 0.12 0.05 b d h j b1 b d a a1 c c j h 1 2 3 6 4 p p p5 5 + _ + _ + _ + _ + _ + _ + _ 1. q emitter 2. q base 3. q base 4. q collector 5. q emitter 6. q collector 1 1 1 2 2 2 2008. 9. 23 1/5 semiconductor technical data ktx102e epitaxial planar pnp/npn transistor revision no : 1 q 2 maximum rating (ta=25 ) 1 q1 23 65 4 q2 characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 150 base current i b 30 characteristic symbol rating unit collector power dissipation p c * 200 junction temperature t j 150 storage temperature range t stg -55 150 q 1 maximum rating (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -150 base current i b -30 q 1, q 2 maximum rating (ta=25 ) d4 123 4 5 6 lot no. type name marking equivalent circuit (top view) * total raing.
ktx102e revision no : 1 2008. 9. 23 2/5 characteristic symbol test condition min. typ. max. unit. collector cut-off current i cbo v cb =-50v, i e =0 - - -0.1 emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 dc current gain h fe (note) v ce =-6v, i c =-2 120 - 400 collector-emitter saturation voltage v ce(sat) i c =-100 , i b =-10 - -0.1 -0.3 v transition frequency f t v ce =-10v, i c =-1 80 - - collector output capacitance c ob v cb =-10v, i e =0, f=1 - 4.0 7.0 noise figure nf v ce =-6v, i c =-0.1 , f=1 , rg=10 - 1.0 10 characteristic symbol test condition min. typ. max. unit. collector cut-off current i cbo v cb =60v, i e =0 - - 0.1 emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 dc current gain h fe (note) v ce =6v, i c =2 120 - 400 collector-emitter saturation voltage v ce(sat) i c =100 , i b =10 - 0.1 0.25 v transition frequency f t v ce =10v, i c =1 80 - - collector output capacitance c ob v cb =10v, i e =0, f=1 - 2.0 3.5 noise figure nf v ce =6v, i c =0.1 , f=1 , rg=10 - 1.0 10 q 2 electrical characteristics (ta=25 ) q 1 electrical characteristics (ta=25 ) note) h fe classification : y(4)120~240, gr(6)200~400 note) h fe classification : y(4)120~240, gr(6)200~400
2008. 9. 23 3/5 ktx102e revision no : 1 c collector current i (ma) 0 -40 30 dc current gain h fe 3k -3 -1 -0.3 -0.1 collector current i (ma) c c 0 collector-emitter voltage v (v) ce q (pnp transistor) 1 ce c i - v h - i v - i c collector current i (ma) -0.1 -0.1 base-emitter saturation base current i ( a) b -0.3 0 base-emitter voltage v (v) be i - v f - i c collector current i (ma) 0.1 3k t transition frequency f (mhz) 10 collector-emitter saturation -0.01 -0.1 collector current i (ma) c v - i -1 -2 -3 -4 -5 -6 -7 -80 -120 -160 -200 -240 i =-0.2ma b b i =-0.5ma b i =-1.0ma b i =-1.5ma b i =-2.0ma b i =0ma common emitter ta=25 c fe c -10 -30 -100 -300 50 100 300 500 1k ta=100 c ta=100 c ta=25 c ta=-25 c ta=-25 c v =-6v v =-6v ce ce v =-1v v =-1v common emitter ce(sat) c voltage v (v) ce(sat) -0.3 -1 -3 -10 -30 -100 -300 -0.03 -0.05 -0.1 -0.3 -0.5 -1 ta=100 c ta=25 c ta=-25 c common emitter i /i =10 c b c be(sat) voltage v (v) be(sat) -0.3 -1 -10 -30 -100 -300 -3 -0.3 -0.5 -1 -3 -5 -10 common emitter i /i =10 ta=25 c c b t c 0.3 1 3 10 30 100 300 30 50 100 300 500 1k common emitter v =-10v ta=25 c ce bbe -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -3 -10 -30 -100 -300 -1k common emitter v =-6v ce ta=100 c ta=25 c ta=-25 c
2008. 9. 23 4/5 ktx102e revision no : 1 c collector current i (ma) 0 40 30 dc current gain h fe 3 1 0.3 0.1 collector current i (ma) c 0 collector-emitter voltage v (v) q (npn transistor) ce 2 ce c i - v h - i v - i c collector current i (ma) 0.1 0.1 base-emitter saturation base current i ( a) b 0.3 0 base-emitter voltage v (v) be i - v f - i c collector current i (ma) 0.1 3k t transition frequency f (mhz) 10 collector-emitter saturation 0.01 0.1 collector current i (ma) c v - i 12345 67 80 120 160 200 240 i =-0.2ma b common emitter ta=25 c fe c 10 30 100 300 50 100 300 500 1k ce(sat) c voltage v (v) ce(sat) 0.3 1 3 10 30 100 300 0.03 0.05 0.1 0.3 0.5 1 ta=100 c ta=25 c ta=-25 c common emitter i /i =10 c b c be(sat) voltage v (v) be(sat) 0.3 1 10 30 100 300 3 0.3 0.5 1 3 5 10 common emitter i /i =10 ta=25 c c b tc 0.3 1 3 10 30 100 300 30 50 100 300 500 1k common emitter v =10v ta=25 c ce b be 0.2 0.4 0.6 0.8 1.0 1.2 1 3 10 30 100 300 1k 0.5 0 1.0 2.0 3.0 5.0 6.0 10 common emitter ta=100 c ta=25 c ta=-25 c v =6v ce ce v =1v 3k common emitter v =6v ce t a=100 c ta=25 c ta=-25 c
2008. 9. 23 5/5 ktx102e revision no : 1 collector power dissipation p (mw) 0 c 0 ambient temperature ta ( c) pc - ta 25 50 75 100 125 50 100 150 200 250 150
|
